• views: 2
• date: 7 November 2026
• posted by: BeMyLove

This paper presents a SET predictive methodology based on coupled MUSCA SEP3 and electrical simulations (CADENCE tool). The method is validated by SET measurements on an inverters chain based on 65-nm bulk CMOS technology, and two designs were considered (respectively for same-well and separate-well designs). These methodologies have been validated in the case of 1000 inverters chain and for heavy ions and demonstrate the impact of the quenching effect. Furthermore, both the designs were considered and the analyses are consistent with experiments and this allows for identification of the quenching effect as the main mechanism responsible for the difference in SET sensitivity. However, the modeling approach can be also used for other logical cells or/and complex radiation environments, to determine SET cross sections, SET cartographies and SET characteristics. This method is applied to SEU analyses, i.e., SBU (Single Bit Upset) and MCU (Multiple Cell Upset) for 65-nm bulk SRAM memory and neutron/proton SET modeling.



   
   
   

Forex Trading

Crypto Trading. 20 USD Bonus after KYC

We need your support!
Make a donation to help us stay online
        
Bitcoin (BTC)
bc1q08g9d22cxkawsjlf8etuek2pc9n2a3hs4cdrld
	
Bitcoin Cash (BCH)
qqvwexzhvgauxq2apgc4j0ewvcak6hh6lsnzmvtkem

Ethereum (ETH)
0xb55513D2c91A6e3c497621644ec99e206CDaf239

Litecoin (LTC)
ltc1qt6g2trfv9tjs4qj68sqc4uf0ukvc9jpnsyt59u

USDT (ERC20)
0xb55513D2c91A6e3c497621644ec99e206CDaf239

USDT (TRC20)
TYdPNrz7v1P9riWBWZ317oBgJueheGjATm

0 1 2 3 4 5

| Print version |

	Information
		Users of GUESTS are not allowed to comment this publication.