Taur Y Fundamentals of Modern VLSI Devices 3ed 2022
Date: 20 April 2023 | Posted by: BeMyLove
Taur Y Fundamentals of Modern VLSI Devices 3ed 2022 | 59.94 MB
English | 626 Pages
Title: Fundamentals of Modern VLSI Devices
Author: Yuan Taur
Year: 2021
Description:
A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.
DOWNLOAD:
https://rapidgator.net/file/9035330833f94b146d2b8c46a28149fa/Taur_Y._Fundamentals_of_Modern_VLSI_Devices_3ed_2022.rar
https://ddownload.com/sn1zi8u23qbe/Taur_Y._Fundamentals_of_Modern_VLSI_Devices_3ed_2022.rar
A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.
DOWNLOAD:
https://rapidgator.net/file/9035330833f94b146d2b8c46a28149fa/Taur_Y._Fundamentals_of_Modern_VLSI_Devices_3ed_2022.rar
https://ddownload.com/sn1zi8u23qbe/Taur_Y._Fundamentals_of_Modern_VLSI_Devices_3ed_2022.rar
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